| PART |
Description |
Maker |
| HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb
HY62V8200B Series 256Kx8bit CMOS SRAM
|
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
http://
|
| MT58L64L32D MT58L64L36D |
(MT58LxxxLxxD) 2Mb SRAM
|
Micron Semiconductor
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| MT58L128L18FT-10 MT58L128L18FT-7.5 MT58L128V18F MT |
2MB: 128K X 18, 64K X 32/36 FLOW-THROUGH SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| HY62LF16206A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
| HY62UF16201A |
Super Low Power Slow SRAM - 2Mb
|
Hynix Semiconductor
|
| CXK77K18R320GB CXK77K18R320GB-3 CXK77K18R320GB-33 |
32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18)
|
Sony Corporation
|
| N02L6181AB27I N02L6181AB27IT N02L6181AB7IT N02L618 |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| N02M0818L2 N02M0818L2A N02M0818L2AN-85I N02M0818L2 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| M36W432-ZAT M36W432B85ZA1T M36W432B70ZA1T M36W432T |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，开机区块快闪记忆体兆位256K x16的SRAM，多个存储产
|
STMicroelectronics N.V.
意法半导
|
| IS61NLP6B436A-200TQBI IS61NVP6B436A-200TQBI IS61NL |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
